BLC9H10XS-350A RF MOSFET LDMOS 50V SOT1273

Part Number：BLC9H10XS-350A   Manufacturer：Ampleon   Device Type：9th‑generation LDMOS, 350 W asymmetric Doherty RF power transistor, optimized for 617–960 MHz sub‑1GHz 4G/5G macro base station final amplifiers.   Key Specifications   Frequency Range：617 MHz ~ 960 MHz Drain Supply Voltage (VDS)：48 V (Typ.), Max VDS：105 V Output Power：350 W (1‑carrier W‑CDMA, PAR=9.6 dB) Power Gain：18.9 dB (Typ.) Drain Efficiency：55.1 % (Typ.) Package：SOT1273‑1 earless flanged cavity package (5 leads) Thermal Resistance (Junction to Case)：0.32 K/W Features：Low memory effect, DPD‑compatible, integrated wideband input matching, ESD protection   Key Features   9th‑generation LDMOS technology with asymmetric Doherty architecture delivers high power, efficiency and linearity； Wideband sub‑1GHz coverage supports 4G LTE, 5G NR, 3G W‑CDMA and other multi‑standard high‑PAR signals； Integrated wideband input matching simplifies external circuits and reduces design complexity； Low output capacitan…