Semiconductor Discrete Devices Fast Recovery Diode is a semiconductor diode specifically designed for rapid switching operations.   Features * Lower reverse leakage current * Low power consumption, high efficiency * High reliability * RoHS compliant product   Applications * Motor drives * Switch-mode power supplies * Industrial control systems   Package and outline   TO-220F-2L                                                                    Maximum Ratings (Tc=25℃)   Parameter Symbol Value Unit Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking Voltage VRRMVRWMVR 600 V Average Rectified Forward Current IF(AV)    15                 A Surge non repetitive forward current   (tp = 8.3 ms sinusoidal) IFSM 150 A Storage Temperature Range Tstg -55~+150 ℃ Operating Junction Temperature TJ 150 ℃     Electrical Characteristics   Parameter Symbol Value(typ) Value(max) Unit  Instantaneous Forward Voltage (Note 1)@ IF = 15A, TC = 25°C@…

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