Semiconductor Discrete Devices Fast Recovery Diode is a semiconductor diode specifically designed for rapid switching operations. Features * Lower reverse leakage current * Low power consumption, high efficiency * High reliability * RoHS compliant product Applications * Motor drives * Switch-mode power supplies * Industrial control systems Package and outline TO-220F-2L Maximum Ratings (Tc=25℃) Parameter Symbol Value Unit Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking Voltage VRRMVRWMVR 600 V Average Rectified Forward Current IF(AV) 15 A Surge non repetitive forward current (tp = 8.3 ms sinusoidal) IFSM 150 A Storage Temperature Range Tstg -55~+150 ℃ Operating Junction Temperature TJ 150 ℃ Electrical Characteristics Parameter Symbol Value(typ) Value(max) Unit Instantaneous Forward Voltage (Note 1)@ IF = 15A, TC = 25°C@…
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