Aluminum Nitride Ceramic Substrate For IGBT Power Modules

Aluminum Nitride (AlN) Ceramic Substrate: The Ultimate Thermal Solution for IGBT & High-Power Modules Product Overview Puwei's Aluminum Nitride (AlN) Ceramic Substrate is engineered to meet the extreme thermal and electrical demands of modern IGBT陶瓷基板 (IGBT Ceramic Substrate) and high-density power modules. As a premier 高热导率陶瓷基板 (High Thermal Conductivity Ceramic Substrate), it efficiently channels heat away from silicon and SiC dies, enabling higher power density, improved efficiency, and unparalleled reliability in sectors like electric vehicles and renewable energy. It is a cornerstone technology in advanced Electronic Packaging and Power Devices. Technical Specifications Core Material Properties: Material: High-Purity Aluminum Nitride (AlN). Thermal Conductivity: 170 - 230 W/(m·K). Dielectric Strength: >15 kV/mm. Flexural Strength: >300 MPa. Coefficient of Thermal Expansion (CTE): ~4.5 ppm/K (excellent match to Si/SiC). Dielectric Constant: ~8.9 @ 1 MHz.…