P-type Half Cut Mono Wafers

Half-sliced silicon wafer Minority carrier lifetime: ≥800us Resistivity: 0.3-2.1 Ω.cm Carbon content: ≤1ppma Oxygen content ≤14ppma   182 silicon wafers Dimension：182*91±0.15mm Conductivity type: N type   210 silicon wafers Dimension：210*105±0.15mm Conductivity type: N type   Customized silicon wafers   Material properties Item Specification Growth mode CZ Crystal orientation ＜100＞±3° Conductivity type N type Dislocation density ≤500   Electrical properties Item Specification Testing method Oxygen content ≤14ppma Fourier transform infrared spectrometer Carbon content ≤1ppma Fourier transform infrared spectrometer Resistivity 0.3-2.1Ω.cm Automatic silicon wafer detection equipment Minority carrier lifetime ≥800us Sinton BCT-400 QSSPC Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient(with injection level: 1E15 cm-3) Transient photoconductance decay method (with injection level: 1E1…