Smooth Surface P-type Mono Silicon Rods

P-type silicon rods Minority carrier lifetime: ≥100us Resistivity: 0.4-1.1Ω.cm Carbon content: ≤0.5×1017 atoms/cm3 Oxygen content ：≤7.5×1017 atoms/cm3   182 silicon rods  Dimension：182*182mm Doping mode: P-type gallium doped   210 silicon rods Dimension：210*210mm Doping mode: P-type gallium doped   Customized silicon rods   Material properties Item Specification Testing method Growth mode CZ / Crystal orientation ＜100＞±3° X-ray diffraction method Conductivity type P type P/N tester Dislocation density ≤500 X-ray diffractometer (ASTM F26-1987)  Electrical properties Item Specification Testing method Oxygen content ≤7.5×1017atoms/cm3 Fourier transform infrared spectrometer Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer Resistivity 0.4-1.1Ω.cm Automatic silicon wafer detection equipment Minority carrier lifetime ≥100us Sinton BCT-400 QSSPCSinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient (with inje…