Phosphorus Doped N-type Silicon Rods

N-type silicon rods Minority carrier lifetime:≥800us Resistivity:0.3-2.1Ω.cm Carbon content: ≤0.5×1017atoms/cm3 Doping mode:  N-type phosphorus doped   182 silicon rods   Dimension：182*182mm Doping mode: N-type phosphorus doped   210 silicon rods Dimension：210*210mm Doping mode: N-type phosphorus doped   Customized silicon rods   Material properties Item Specification Testing method Growth mode CZ / Crystal orientation ＜100＞±3° X-ray diffraction method Conductivity type N type P/N tester Dislocation density ≤500 X-ray diffractometer (ASTM F26-1987)  Electrical properties     Item Specification Testing method Oxygen content ≤6.5×1017atoms/cm3 Fourier transform infrared spectrometer Carbon content ≤0.5×1017atoms/cm3 Fourier transform infrared spectrometer Resistivity 0.3-2.1Ω.cm Automatic silicon wafer detection equipment Minority carrier lifetime ≥800us Sinton BCT-400 QSSPC Sinton BCT-400 QSSPC quasi-steady-state photoconductance decay method Transient…